Enhanced programming and erasing speeds in p-channel charge-trapping flash transistor devices with SiGe channel

Author

Liu, Li-Jung ; Chang-Liao, Kuei-Shu ; Jian, Yi-Chuen ; Wang, Tien-Ko ; Tsai, Ming-Jinn

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

P-channel charge-trapping flash transistor devices with different Ge contents in SiGe channel and different thicknesses of Si_0.8Ge_0.2 channel are investigated in this work. Both programming and erasing speeds are significantly improved by employing SiGe channel in comparison with those employing Si-channel. Moreover, satisfactory retention and endurance characteristics for device with SiGe channel are also achieved, which indicates the out-diffusion of Ge atoms from channel does not affect the reliability properties of flash memory devices.

Keywords

Ge-Si alloys; flash memories; semiconductor materials; transistors; SiGe; endurance characteristics; erasing speeds; flash memory devices; p-channel charge-trapping flash transistor devices; programming speed; reliability properties; retention characteristics; silicon-germanium channel; Flash memory; High K dielectric materials; Logic gates; Performance evaluation; Programming; Silicon germanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135247

Filename

6135247