Title :
Incidence angle-dependent transport across a single graphene p-n junction
Author :
Sutar, Surajit ; Comfort, Everett ; Lee, Ji Ung
Author_Institution :
Coll. of Nanoscale Sci. & Eng., SUNY at Albany, Albany, NY, USA
Abstract :
Graphene p-n junction (GPNJ) can be used to build logic, using the incidence-angle-dependent carrier transmission [1]. This report presents a method to gate Graphene by buried split-gates (SG) which enable precise control of the doping profiles by the SG spacing. The main result of the report is that even at T = 300K and modest graphene mobility, the GPNJ resistance shows a significant variation with incidence angle, indicating carrier chirality effects.
Keywords :
buried layers; carrier mobility; doping profiles; elemental semiconductors; graphene; p-n junctions; semiconductor doping; C; buried split-gates; carrier chirality effects; doping profiles; graphene mobility; graphene p-n junction resistance; incidence angle-dependent transport; incidence-angle-dependent carrier transmission; single graphene p-n junction; single graphene spacing; temperature 300 K; Doping; Hafnium oxide; Logic gates; P-n junctions; Resistance; Split gate flash memory cells;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135258
