Title :
Soft breakdown triggers for large area capacitors under constant voltage stress
Author :
Schmitz, J. ; Kretschmann, A.J. ; Tuinhout, H.P. ; Woerlee, P.H.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
This work quantitatively compares breakdown triggers for constant voltage stress of large area NMOS capacitors (up to 10 mm2) with 1.8 to 12 nm gate oxide thickness (with negative VG). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation (RMS). We also present data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level
Keywords :
CMOS integrated circuits; MOS capacitors; current fluctuations; electric breakdown; integrated circuit noise; integrated circuit reliability; integrated circuit testing; 1.8 to 12 nm; CMOS ICs; SiO2-Si; background noise level; breakdown identification; breakdown signal; breakdown triggers; constant voltage stress; current fluctuation; current step trigger; data filtering algorithms; gate oxide thickness; large area NMOS capacitors; large area capacitors; negative gate voltage; soft breakdown triggers; Breakdown voltage; Capacitors; Carbon capture and storage; Dielectric breakdown; Electric breakdown; Laboratories; MOS devices; Stress; Testing; Time measurement;
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
DOI :
10.1109/RELPHY.2001.922932
