On the dominant interface trap generation process during hot-carrier stressing [MOSFETs]

Author

Ang, D.S. ; Ling, C.H.

Author_Institution

Fac. of Eng., Nat. Univ. of Singapore, Singapore

fYear

2001

fDate

2001

Firstpage

412

Lastpage

418

Abstract

The analysis of a kink observed in the charge pumping current versus stress time curve supports the recent claim of a new interface-trap generation mechanism during hot-carrier stress. The trap generation process, which relates to the interaction between hot carriers and the Si-SiO₂ interface, proceeds with a generation coefficient higher than those of hot-hole or hot-electron injection. With its dominance in the late stage, it is likely to limit the lifetime of N-MOSFETs under AC operation

Keywords

CMOS integrated circuits; MOSFET; electric current; electron traps; hole traps; hot carriers; interface states; semiconductor device reliability; semiconductor device testing; AC operation; CMOS IC; MOSFETs; N-MOSFET lifetime; charge pumping current; dominant interface trap generation process; generation coefficient; hot carrier/Si-SiO₂ interface interaction; hot-carrier stress; hot-carrier stressing; hot-electron injection; hot-hole injection; interface-trap generation mechanism; stress time; trap generation process; Charge carrier processes; Charge pumps; Degradation; Electron traps; Hot carriers; MOSFET circuits; Pulse measurements; Secondary generated hot electron injection; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922935

Filename

922935