Realization of n-ZnO:Ga / p-ZnO:GaP homojunction by RF magnetron sputtering

Author

Gowrishankar, S. ; Balakrishnan, L. ; Balasubramanian, T. ; Gopalakrishnan, N.

Author_Institution

Dept. of Phys., Nat. Inst. of Technol., Tiruchirappalli, India

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

ZnO based LEDs are received great attention as it has wide band gap (~3.36 eV) and large exciton binding energy (~60 meV) at room temperature [1]. It is known that the basic components for LEDs are high quality p-type and n-type layers. The undoped ZnO exhibits intrinsic n-type conductivity and doping with III group elements such as B, In, Al, and Ga will enhance the electrical properties. But, it is too difficult to produce high quality p-type ZnO layers due to compensation of native defects, formation of deep acceptor and low solubility of dopants.

Keywords

II-VI semiconductors; III-V semiconductors; electrical conductivity; gallium; gallium compounds; light emitting diodes; p-n junctions; semiconductor doping; semiconductor thin films; solubility; sputter deposition; wide band gap semiconductors; zinc compounds; LED; RF magnetron sputtering; ZnO:Ga-ZnO:GaP; deep acceptor; doping; electrical properties; exciton binding energy; n-p homojunction; n-type conductivity; n-type layers; p-type layers; solubility; temperature 293 K to 298 K; Conductivity; Doping; Excitons; Films; Light emitting diodes; Radio frequency; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135308

Filename

6135308