DocumentCode
3100970
Title
An electrothermal model of interconnects based on a transmissionline network
Author
Yan Shao ; Xiao Chun Li ; Jun Fa Mao
Author_Institution
Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2012
fDate
4-7 Dec. 2012
Firstpage
1247
Lastpage
1276
Abstract
In this paper, an electrothermal model is proposed for transient analysis of interconnects on CMOS integrated circuits excited by electrostatic discharge pulse. A thermal transmission-line network is established to model the thermal conduction in interconnect structure. The exact input impedance of the thermal network is obtained and then inverse fast Fourier transformation is used to predict transient thermal responses of interconnects. An iterative process is developed to include electrothermal effects that positive feedback occurs between the electrical and thermal behaviours of interconnects, which can impact the performance and reliability of circuits. It is shown that interconnect temperature and resistance will be underestimated if electrothermal effects and transmission line effects are ignored. Numerical results show that the proposed model is much more efficient at the cost of less than 1% error compared with thermal solver based on finite element method.
Keywords
CMOS integrated circuits; electrostatic discharge; fast Fourier transforms; finite element analysis; heat conduction; integrated circuit interconnections; integrated circuit reliability; inverse transforms; transient analysis; transmission lines; CMOS integrated circuits; circuit reliability; electrical behaviour; electrostatic discharge pulse; electrothermal effects; electrothermal model; finite element method; input impedance; interconnect resistance; interconnect structure; interconnect temperature; interconnects; inverse fast Fourier transformation; iterative process; positive feedback; thermal behaviour; thermal conduction; thermal network; thermal solver; thermal transmission-line network; transient analysis; transient thermal responses; transmission line effects; Electrostatic discharges; Electrothermal effects; Finite element methods; Integrated circuit interconnections; Integrated circuit modeling; Resistance; Transient analysis; CMOS integrated circuits; Circuit reliability; electrothermal effects; temperature; transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2012 Asia-Pacific
Conference_Location
Kaohsiung
Print_ISBN
978-1-4577-1330-9
Electronic_ISBN
978-1-4577-1331-6
Type
conf
DOI
10.1109/APMC.2012.6421893
Filename
6421893
Link To Document