Performance Enhancement of Plasmonic Sub-Terahertz Detector Based on Antenna Integrated Low-Impedance Silicon MOSFET

Author

Min Woo Ryu ; Kwan Sung Kim ; Jeong Seop Lee ; Kibog Park ; Jong-Ryul Yang ; Seong-Tae Han ; Kyung Rok Kim

Author_Institution

Sch. of Electr. & Comput. Eng., Ulsan Nat. Inst. of Sci. & Technol., Ulsan, South Korea

Volume

36

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

220

Lastpage

222

Abstract

We demonstrate the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and report the experimental results of Si MOSFET impedance in THz regime using 0.2-THz measurement system. By designing FET with low-impedance ranges (<;1 kΩ) and integrating antennas with impedances of 50 and 100 Ω, we found that our low-impedance MOSFETs have the input impedance criterion of 50 Ω at 0.2 THz and the MOSFETs with thinner gate oxide show the highly enhanced plasmonic photoresponses at 50-Ω antenna by 325 times from the result of the detector without antenna.

Keywords

MOSFET; elemental semiconductors; plasmonics; silicon; submillimetre wave antennas; submillimetre wave detectors; submillimetre wave transistors; Si; field-effect transistor based plasmonic THz detector; frequency 0.2 THz; gate oxide; highly enhanced plasmonic photoresponses; low-impedance MOSFET; monolithic integrated antenna; performance enhancement; plasmonic subterahertz detector; Antennas; Detectors; Impedance; MOSFET; Plasmons; Silicon; MOSFET; detector; impedance; photoresponse; plasmonic; terahertz;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2394446

Filename

7017494