High-brightness light-emitting diodes grown by MBE on ZnSe substrates

Author

Eason, D.B. ; Yu, Z. ; Hughes, W.C. ; Boney, C. ; Cook, J.W., Jr. ; Schetzina, J.F. ; Cantwell, Gene ; Harsch, William C.

Author_Institution

Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA

Volume

1

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

329

Abstract

High-brightness blue and green light-emitting diodes (LEDs) operating at peak wavelengths in the range 489-514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are II-VI heterostructures grown by molecular beam epitaxy (MBE) using (100) ZnSe substrates. The double-heterostructure (DH) LED devices consist of an n-type ZnSe:Cl layer, an active region consisting either of a ZnCdSe MQW (blue) or a ZnTeSe layer (green), and a p-type ZnSe:N layer deposited using a nitrogen plasma source

Keywords

light emitting diodes; (100) ZnSe substrates; 489 to 514 nm; II-VI materials; MBE growth; ZnSe-ZnCdSe; ZnSe-ZnTeSe; blue LEDs; double heterostructures; green LEDs; high-brightness light-emitting diodes; Chemical industry; DH-HEMTs; Degradation; Electrodes; Laboratories; Light emitting diodes; Molecular beam epitaxial growth; Substrates; Testing; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.587027

Filename

587027