• DocumentCode
    3101465
  • Title

    Charge storage stability of SiO2 film electret

  • Author

    Fei, Yan ; Xu, Zhen ; Chen, Chong

  • Author_Institution
    Middle Tennessee State Univ., Murfreesboro, TN, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    The SiO2 electret has received a lot of research attention recently. This important inorganic electret material emerged in 1980s. Besides having excellent charge storage stability, the SiO2 electret is fully compatible with IC planar process and micro-mechanical processing technology because it is prepared on monocrystalline silicon wafer. Therefore, it has the advantage of integration and miniaturization of all kinds of electret transducers. Other commonly used polymer electret materials may not have this property. In this paper, the effects of silicon substrate materials, chemical surface treatments, and corona charging on charge storage stability of SiO2 film electrets were studied. Some analyses and explanations based on these studies are given
  • Keywords
    dielectric thin films; electrets; silicon compounds; surface treatment; SiO2; charge storage stability; chemical surface treatment; corona charging; inorganic electret; silicon dioxide film; silicon substrate; Chemical technology; Electrets; Inorganic materials; Material storage; Polymers; Silicon; Stability; Substrates; Surface charging; Transducers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SoutheastCon 2001. Proceedings. IEEE
  • Conference_Location
    Clemson, SC
  • Print_ISBN
    0-7803-6748-0
  • Type

    conf

  • DOI
    10.1109/SECON.2001.923077
  • Filename
    923077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3101465