DocumentCode
310147
Title
Electrical characterization of blue AlGaN/InGaN/GaN LEDs
Author
Lee, Lena ; Osinski, Marek ; Malloy, Kevin J.
Author_Institution
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
332
Abstract
We report results of electrical characterization studies of Nichia NLPB500 blue LEDs. The devices incorporate an AlGaN:Mg/InGaN:Si:Zn/GaN:Si double heterostructure and were subject to high-current stress for short periods of time. The electrical characterization included IV, CV, DLTS and admittance spectroscopy. DC IV measurements showed large reverse leakage currents and diode ideality factors around n=5 at room temperature
Keywords
deep level transient spectroscopy; AlGaN-InGaN-GaN; AlGaN/InGaN/GaN double heterostructure; CV measurements; DLTS; IV measurements; Nichia NLPB500; admittance spectroscopy; blue LEDs; electrical characterization; high-current stress; ideality factors; reverse leakage currents; Admittance; Brightness; Capacitance; Chemical industry; Chemical technology; Gallium nitride; Light emitting diodes; Temperature dependence; Thermal stresses; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.587029
Filename
587029
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