DocumentCode
3101720
Title
Thermal characterization of high power transistor arrays
Author
Maize, Kerry ; Wang, Xi ; Kendig, Dustin ; Shakouri, Ali ; French, William ; O´Connell, Barry ; Lindorfer, Philip ; Hopper, Peter
Author_Institution
Baskin Sch. of Eng., Univ. of California Santa Cruz, Santa Cruz, CA
fYear
2009
fDate
15-19 March 2009
Firstpage
50
Lastpage
54
Abstract
Thermal performance is an important factor in the design of power devices. Previous studies have shown that nonuniform temperature distributions occur in both small transistors [1,2,3] and in large area power transistor devices [4,5,6]. We present extensive thermal characterization of large scale transistor arrays that are typical in power applications. Thermal images using the thermoreflectance technique as well as thermocouple data are presented for the device under both low and high current conditions. Thermal characterization is obtained for load currents up to 4 amperes and current densities up to 45 A/mm2 in the power arrays. Temperature nonuniformity in the arrays is studied as a function of array size, bias level, and ambient temperature. Increased heating is shown to develop near the source contact region in the arrays.
Keywords
MIS devices; infrared imaging; power transistors; thermoreflectance; high power transistor arrays; large area power transistor devices; power devices; temperature nonuniformity; thermal imaging; thermoreflectance; FETs; Fingers; MOSFETs; Power integrated circuits; Power transistors; Temperature dependence; Temperature distribution; Thermal engineering; Thermal factors; Voltage; LDMOS; Power ICs; Power transistors; power arrays; semiconductor heating; thermal imaging; thermoreflectance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium, 2009. SEMI-THERM 2009. 25th Annual IEEE
Conference_Location
San Jose, CA
ISSN
1065-2221
Print_ISBN
978-1-4244-3664-4
Electronic_ISBN
1065-2221
Type
conf
DOI
10.1109/STHERM.2009.4810742
Filename
4810742
Link To Document