Title :
A 0.7 nm EOT and low gate leakage current for MOS device with Ti/HfO2/Hf higher-k gate dielectric
Author :
Hong, Hao-Zhi ; Chang-Liao, Kuei-Shu ; Fu, Chung-Hao ; Li, Chen-Chien ; Hsu, Ya-Yin ; Wang, Tien-Ko
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Electrical characteristics and reliability of MOS devices with HfO2 or Ti/HfO2/Hf high-k dielectrics are studied and compared in this work. For the MOS device with Ti/HfO2/Hf gate dielectric stack after a PDA at 600°C, its equivalent oxide thickness (EOT) value is 7.1 Å and the leakage density is about 2.05 × 10-1A/cm2.
Keywords :
MIS devices; hafnium compounds; high-k dielectric thin films; leakage currents; titanium; EOT; MOS device; PDA; Ti-HfO2-Hf; electrical characteristics; equivalent oxide thickness; higher-k gate dielectric; leakage density; low gate leakage current; reliability; size 0.7 nm; temperature 600 degC; Dielectrics; Hafnium compounds; High K dielectric materials; Leakage current; Logic gates; MOS devices;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135388
