Challenges and approaches of fabricating GaN-based green lasers

Author

Sizov, Dmitry S. ; Bhat, Rajaram ; Zah, Chung-en

Author_Institution

Semicond. Technol. Res., Sci. & Technol. Div., Corning Inc., Corning, NY, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

In this paper we discuss the motivation, challenges, and progress in making group-III nitride lasers emitting in the green spectral range, and compare the devices created using epitaxial structures grown on GaN substrates with c-plane (i.e. plane with (0001) crystallographic orientation) and semipolar-plane (i.e. with the plane tilted from c-plane by >;0 and <;90 degree) orientations. The different structure design choices are discussed, taking into account specific material properties and crystal growth requirements for these orientations.

Keywords

III-V semiconductors; gallium compounds; indium compounds; integrated optics; optical fabrication; quantum well lasers; wide band gap semiconductors; GaN; GaN substrates; GaN-based green lasers; InGaN; crystal growth; crystallographic orientation; epitaxial structures; group-III nitride lasers; semipolar-plane; structural design; Diode lasers; Green products; Optical polarization; Optical pumping; Pump lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135409

Filename

6135409