Title :
Characterization and resistive switching properties of solution-processed HfO2, HfSiO4, and ZrSiO4 thin films on rigid and flexible substrates
Author :
Tedesco, J.L. ; Zheng, W. ; Kirillov, O.A. ; Pookpanratana, S. ; Jang, H. -J ; Kavuri, P.P. ; Nguyen, N.V. ; Richter, C.A.
Author_Institution :
Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Memristors, nonvolatile bipolar resistive switching devices first intentionally fabricated in 2008 [1], have attracted attention for use in a wide range of applications. To date, most memristors have been fabricated from TiOx [1] or TaOx [2]. However, it is necessary to explore the memristive properties of other dielectric materials, because these dielectrics may have advantageous properties that have not yet been explored.
Keywords :
X-ray photoelectron spectra; dielectric thin films; electrical resistivity; ellipsometry; hafnium compounds; memristors; optical microscopy; sol-gel processing; ultraviolet spectra; vacuum deposition; zirconium compounds; HfO2; HfSiO4; Si; X-ray photoelectron spectroscopy; XPS; ZrSiO4; capacitance-frequency measurement; capacitance-voltage measurement; conductance- frequency measurement; current-voltage measurement; deep ultraviolet spectroscopic ellipsometry; dielectric films; flexible polyethylene teraphthalate substrates; memristors; optical microscopy; optical profilometry; resistive switching properties; silicon substrates; sol-gel synthesis; solution-processed thin films; temperature 293 K to 298 K; thermally evaporated aluminum contacts; Memristors; Optical device fabrication; Optical films; Optical imaging; Optical switches; Substrates;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135416
