Title :
Effects of triple blocking layers on operation performance in charge-trapping flash devices
Author :
Ye, Zong-Hao ; Chang-Liao, Kuei-Shu ; Tsai, Jeng-Lin ; Wang, Tien-Ko
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Although retention characteristic of charge trapping (CT) flash device is improved by using Al2O3/HfO2 blocking layer, the electron back tunneling (EBT) during erasing is still an issue. In order to overcome this issue, CT flash devices with triple blocking layers of either high/low/high (HLH) or low/high/low (LHL) electron energy barrier structures are proposed in this work. Programming, erasing, and retention characteristics of CT flash device can be enhanced by these triple blocking layers. In addition, CT flash device with Al2O3/HfAlO/Al2O3 triple blocking layer has the most excellent data retention and good programming speed.
Keywords :
aluminium compounds; flash memories; hafnium compounds; tunnelling; Al2O3-HfAlO-Al2O3; CT flash device; EBT; HLH electron energy barrier structure; LHL electron energy barrier structure; blocking layer; charge-trapping flash devices; data retention; electron back tunneling; erasing characteristic; high-low-high electron energy barrier structure; low-high-low electron energy barrier structure; programming characteristic; programming speed; retention characteristic; triple-blocking layers; Aluminum oxide; Charge carrier processes; Current density; Hafnium compounds; Logic gates; Programming; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135420
