Title :
Cascode class-E power amplifier in 180/350 nm CMOS for EER system
Author :
Rumyancev, Ivan A. ; Korotkov, Alexander S. ; Hauer, Johann
Author_Institution :
Integrated Electron. Dept., St. Petersburg State Polytech. Univ., St. Petersburg, Russia
Abstract :
Cascode class-E power amplifier in 180/350 nm CMOS for envelope elimination and restoration system is presented. Designed amplifier achieves 21 dBm output power and 44% PAE at 1900 MHz with 3 V supply voltage. Charging acceleration technique is used for efficiency enhancement. ESD protection problem is discussed.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; electrostatic discharge; CMOS; EER system; ESD protection problem; cascode class-E power amplifier; charging acceleration technique; efficiency 44 percent; efficiency enhancement; envelope elimination and restoration system; frequency 1900 MHz; size 180 nm; size 350 nm; voltage 3 V; CMOS integrated circuits; Capacitors; Electrostatic discharges; Logic gates; Power amplifiers; Radio frequency; Transistors; ESD protection; cascode; charging acceleration technique; class-E; envelope elimination and restoration; power amplifier;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on
Conference_Location :
Villach
Print_ISBN :
978-1-4673-4580-4
DOI :
10.1109/PRIME.2013.6603167
