DocumentCode :
310770
Title :
Solid-state power switches for HPM modulators
Author :
Kingsley, L.E. ; Pastore, R. ; Singh, H. ; Ayres, G. ; Burdalski, R. ; Agee, J.F.
Author_Institution :
Phys. Sci. Directorate, US Army Res. Lab., Fort Monmouth, NJ, USA
Volume :
1
fYear :
1995
fDate :
3-6 July 1995
Firstpage :
65
Abstract :
Power modulators for pulsed microwave applications, generally utilizing a thyratron-switched PFN, typically produce 50-120 kV, 1-2 kA microsecond timescale pulses with sub-microsecond (/spl sim/100-200 nsec) risetimes. This paper reviews an investigation into the feasibility of utilizing certain solid-state power switches at the relatively fast speeds required for HPM modulators. Different thyristor switches, an ABB HCT and an n-type MCT, were investigated in a fast (/spl sim/136 nsec), low-impedance 1.4-/spl mu/sec PFN. Limited success was obtained, as both switches demonstrated sub-microsecond switching times. The ABB HCT switching a bias of 944 V in 220 nsec. These results indicate that thyristor switches may be fast enough for some HPM modulator applications.
Keywords :
MOS-controlled thyristors; microwave generation; power semiconductor switches; pulse generators; pulsed power switches; thyristor applications; 1 to 2 kA; 1.4 mus; 100 to 200 ns; 220 ns; 3840 V; 50 to 120 kV; 524 ns; 944 V; ABB HCT; high power microwave modulators; low-impedance pulse forming network; n-type MCT; solid-state power switches; thyristor switches; Laboratories; MOSFETs; Packaging; Pulse modulation; Rectifiers; Solid state circuits; Switches; Testing; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1995. Digest of Technical Papers., Tenth IEEE International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-2791-8
Type :
conf
DOI :
10.1109/PPC.1995.596456
Filename :
596456
Link To Document :
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