Title :
Photonic DC and microwave characteristics of AlGaAs/GaAs/InGaAs pseudomorphic MODFET
Author :
Kim, H.J. ; Song, S.H. ; Kim, D.M. ; Han, I.K. ; Lee, J.I. ; Kang, K.N. ; Kim, S.H. ; Choi, S.S. ; Cho, K.
Author_Institution :
Div. of Electron. & Inf. Technol., KIST, Seoul, South Korea
Abstract :
In this work, we report photonic microwave characteristics of AlGaAs/GaAs/InGaAs pseudomorphic MODFET controlled by /spl lambda/=0.83 /spl mu/m optical source. With photonic controlled DC and microwave characteristics, we extracted nonlinear equivalent circuit model parameters of the fabricated MODFET, and investigated the physical mechanism of microwave performance improvement in the MODFET.
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; 0.83 micron; AlGaAs-GaAs-InGaAs; HEMT; microwave performance improvement; model parameters extraction; nonlinear equivalent circuit model parameters; optical source; optically-controlled MODFET; photonic DC characteristics; photonic microwave characteristics; pseudomorphic MODFET; Gallium arsenide; HEMTs; Indium gallium arsenide; Lighting; MODFET circuits; Microwave devices; Nonlinear optics; Optical control; Optical devices; Optical saturation;
Conference_Titel :
Microwave Photonics, 1996. MWP '96. Technical Digest., 1996 Internatonal Topical Meeting on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-3129-X
DOI :
10.1109/MWP.1996.660359
