Title :
Measurement of IGBT switching frequency limits
Author :
Sheng, K. ; Williams, B.W. ; He, X. ; Qian, Zhiming ; Finney, S.J.
Author_Institution :
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
Abstract :
In this paper methods of obtaining IGBT switching frequency limits are discussed. A new nondestructive measurement method is proposed and verified by experimentation. The measured results agree with calculations based on IGBT loss components. This method can also be used to monitor other power bipolar devices in switching circuits
Keywords :
frequency measurement; insulated gate bipolar transistors; losses; nondestructive testing; power semiconductor switches; semiconductor device measurement; switching; IGBT loss components; IGBT switching frequency limits measurement; nondestructive measurement method; power bipolar devices; switching circuits; Frequency measurement; Insulated gate bipolar transistors; Loss measurement; Switches; Switching circuits; Switching frequency; Switching loss; Temperature; Thermal resistance; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1999. PESC 99. 30th Annual IEEE
Conference_Location :
Charleston, SC
Print_ISBN :
0-7803-5421-4
DOI :
10.1109/PESC.1999.789031
