DocumentCode :
310876
Title :
High Susceptibility Of p+ Gate Oxides To Plasma Technology
Author :
Kim, Sang U.
Author_Institution :
Sematech
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
189
Lastpage :
192
Keywords :
Charge measurement; Current measurement; Diodes; Leakage current; Performance analysis; Performance evaluation; Plasma measurements; Plasma properties; Plasma sources; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596739
Filename :
596739
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=310876
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