DocumentCode
310876
Title
High Susceptibility Of p+ Gate Oxides To Plasma Technology
Author
Kim, Sang U.
Author_Institution
Sematech
fYear
1997
fDate
13-14 May 1997
Firstpage
189
Lastpage
192
Keywords
Charge measurement; Current measurement; Diodes; Leakage current; Performance analysis; Performance evaluation; Plasma measurements; Plasma properties; Plasma sources; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location
Monterey, California, USA
Print_ISBN
0-9651-5771-7
Type
conf
DOI
10.1109/PPID.1997.596739
Filename
596739
Link To Document