• DocumentCode
    310877
  • Title

    Comparison Of Techniques For Gate Oxide Damage Measurements

  • Author

    Educato, James L. ; Gabriel, Calvin T.

  • Author_Institution
    VLSI Technology, Inc.
  • fYear
    1997
  • fDate
    13-14 May 1997
  • Firstpage
    193
  • Lastpage
    196
  • Keywords
    Antenna measurements; Breakdown voltage; Charge measurement; Current measurement; Design for quality; Gate leakage; Plasma measurements; Stress measurement; Threshold voltage; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 1997., 2nd International Symposium on
  • Conference_Location
    Monterey, California, USA
  • Print_ISBN
    0-9651-5771-7
  • Type

    conf

  • DOI
    10.1109/PPID.1997.596741
  • Filename
    596741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=310877