A monolithic 4 bit 2 GSps resonant tunneling analog-to-digital converter

Author

Broekaert, T.P.E. ; Brar, B. ; van der Wagt, J.P.A. ; Seabaugh, A.C. ; Moise, T.S. ; Morris, F.J. ; Beam, E.A., III. ; Frazier, G.A.

Author_Institution

Corp. Res. Labs., Texas Instrum. Incorp., Dallas, TX, USA

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

187

Lastpage

190

Abstract

The combination of resonant tunneling diodes (RTDs) and heterostructure field-effect transistors (HFETs) provides a versatile technology for implementing microwave digital and mixed-signal applications. Here we demonstrate the first monolithic flash RTD/HFET analog-to-digital converter (ADC). The first pass ADC achieved 2.7 effective bits at 2 GSps. The one bit quantizer achieved a single tone spurious free dynamic range (SFDR) of greater than 40 dB at 2 GSps for a 220 MHz single tone input with dithering.

Keywords

JFET integrated circuits; analogue-digital conversion; resonant tunnelling diodes; 220 MHz; 4 bit; dithering; heterostructure field-effect transistor; monolithic flash RTD/HFET analog-to-digital converter; quantizer; resonant tunneling diode; single tone spurious free dynamic range; Analog-digital conversion; Capacitors; Clocks; Feedback circuits; HEMTs; Integrated circuit interconnections; MODFETs; Propagation delay; Resonant tunneling devices; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628266

Filename

628266