Title :
Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
Author :
Hurm, V. ; Benz, W. ; Bronner, W. ; Fink, T. ; Jakobus, T. ; Kaufel, G. ; Köhler, K. ; Lao, Z. ; Leven, A. ; Ludwig, M. ; Moglestue, C. ; Raynor, B. ; Rosenzweig, J. ; Schlechtweg, M. ; Thiede, A. ; Weisser, S.
Author_Institution :
Fraunhofer Inst. of Appl. Solid State Phys., Freiburg, Germany
Abstract :
1.3 - 1.55μm wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 μm gate length AlGaAs/GaAs HEMT process. The In/sub 0.53/Ga/sub 0.47/As MSM and PIN photodiodes grown on GaAs have nearly identical characteristics to photodiodes grown on InP.
Keywords :
HEMT integrated circuits; III-V semiconductors; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; p-i-n photodiodes; 0.3 micron; 1.3 to 1.55 micrometre; 10 Gbit/s; 20 Gbit/s; GaAs; HEMT process; III-V semiconductors; MSM-HEMT photoreceivers; PIN-HEMT photoreceivers; gate length; photodiodes; Absorption; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Optical buffering; Optical surface waves; PIN photodiodes; Substrates; Surface morphology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628268
