Title :
High speed AlGaAs/GaAs HBT circuits for up to 40 Gb/s optical communication
Author :
Runge, K. ; Zampardi, P.J. ; Pierson, R.L. ; Thomas, P.B. ; Beccue, S.M. ; Yu, R. ; Wang, K.C.
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
Abstract :
High speed circuits such as multiplexer/demultiplexers, variable-gain limiting amplifiers (VGAs), and transimpedance amplifiers operating at high bit rates (>30 Gb/s) are required for the realization of high performance lightwave systems using TDM or WDM. We have demonstrated 40 Gb/s multiplexers, 30 Gb/s data and clock regeneration, DC-26 GHz VGAs, and transimpedance amplifiers with 3 dB bandwidth in excess of 20 GHz for use in such systems using a manufacturable hybrid digital/microwave HBT process.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; demultiplexing equipment; gallium arsenide; heterojunction bipolar transistors; integrated optoelectronics; multiplexing equipment; optical communication equipment; preamplifiers; time division multiplexing; wavelength division multiplexing; 0 to 26 GHz; 20 GHz; 30 Gbit/s; 40 Gbit/s; AlGaAs-GaAs; HBT circuits; III-V semiconductors; TDM; WDM; bit rates; clock regeneration; hybrid digital/microwave HBT process; lightwave systems; multiplexer/demultiplexers; optical communication; transimpedance amplifiers; variable-gain limiting amplifiers; Bit rate; Circuits; Clocks; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Optical amplifiers; Stimulated emission; Time division multiplexing; Wavelength division multiplexing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628271
