DocumentCode :
3111107
Title :
Features of surface and interface with dielectric for narrow-gap A3B5 semiconductors
Author :
Kuryshev, Georgy L.
Author_Institution :
Siberian Branch, A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear :
2011
fDate :
June 30 2011-July 4 2011
Firstpage :
61
Lastpage :
62
Abstract :
The possibility of InAs surface passivation by the ultrathin (5-15 nm) native oxide films is presented. The density of surface states, (from the peak low-signal conductivity) shows that the boundary between the oxide - InAs is characterized by a low density of surface states 3-5·1010 cm-2 eV-1.
Keywords :
III-V semiconductors; indium compounds; passivation; semiconductor thin films; surface states; InAs; narrow-gap semiconductors; surface passivation; surface states; ultrathin native oxide films; Chemicals; Films; Oxidation; Surface discharges; Surface morphology; Surface reconstruction; Surface treatment; Interface; anodic oxidation; surface states;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
Type :
conf
DOI :
10.1109/EDM.2011.6006894
Filename :
6006894
Link To Document :
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