Zn-doped InGaAs with high carrier concentration enhanced by Sb surfactant for low specific contact resistance

Author

Sato, Tomonari ; Mitsuhara, Manabu ; Iga, Ryuzo ; Kanazawa, Shigeru ; Inoue, Yasuyuki

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

A dramatic increase of carrier concentration in Zn-doped InGaAs layer was achieved by adding a small amount of Sb as a surfactant during MOVPE growth. A carrier concentration as high as 6 × 10¹⁹ cm^-3 was obtained and resulted in a specific contact resistance lower than 2 × 10^-7 Ωcm².

Keywords

III-V semiconductors; MOCVD; carrier density; contact resistance; gallium arsenide; heavily doped semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; surfactants; vapour phase epitaxial growth; zinc; InGaAs:Zn; MOVPE growth; antimony surfactant; carrier concentration; heavily Zn-doped InGaAs layer; metalorganic vapor phase epitaxy; specific contact resistance; Capacitance measurement; Contact resistance; Electrical resistance measurement; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Photonic band gap; Temperature; Transmission line measurements; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5515978

Filename

5515978