Title :
Zn-doped InGaAs with high carrier concentration enhanced by Sb surfactant for low specific contact resistance
Author :
Sato, Tomonari ; Mitsuhara, Manabu ; Iga, Ryuzo ; Kanazawa, Shigeru ; Inoue, Yasuyuki
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
A dramatic increase of carrier concentration in Zn-doped InGaAs layer was achieved by adding a small amount of Sb as a surfactant during MOVPE growth. A carrier concentration as high as 6 × 1019 cm-3 was obtained and resulted in a specific contact resistance lower than 2 × 10-7 Ωcm2.
Keywords :
III-V semiconductors; MOCVD; carrier density; contact resistance; gallium arsenide; heavily doped semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; surfactants; vapour phase epitaxial growth; zinc; InGaAs:Zn; MOVPE growth; antimony surfactant; carrier concentration; heavily Zn-doped InGaAs layer; metalorganic vapor phase epitaxy; specific contact resistance; Capacitance measurement; Contact resistance; Electrical resistance measurement; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Photonic band gap; Temperature; Transmission line measurements; Zinc;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5515978
