Reliability testing by precise electrical measurement

Author

Dorey, A.P. ; Jones, B.K. ; Richardson, A.M. ; Russell, P.C. ; Xu, Y.Z.

Author_Institution

Dept. of Phys. & Eng., Lancaster Univ., UK

fYear

1988

fDate

12-14 Sep 1988

Firstpage

369

Lastpage

373

Abstract

Tests have been devised which provide indication of incipient failure of CMOS devices. The experimental methodology to confirm the value of the tests depends on the acceptance of the Arrenhius relationships as it was investigated using accelerated life test techniques. Tests have included leakage current, transient current, electrical noise, upper cutoff frequency and delay times. The devices under tests have been stressed to accelerate aging and the results of the diagnostic electrical measurements correlated with subsequent failure. Consideration has been given to the implementation of the reliability tests in conjunction with the normal functional testing

Keywords

CMOS integrated circuits; delays; electric noise measurement; integrated circuit testing; leakage currents; life testing; reliability; transients; Arrenhius relationships; CMOS devices; IC testing; accelerated life test; aging; delay times; electrical measurement; electrical noise; leakage current; reliability tests; transient current; upper cutoff frequency; Circuit testing; Electric variables measurement; Integrated circuit interconnections; Integrated circuit measurements; Integrated circuit reliability; Leakage current; Reliability engineering; Semiconductor device measurement; Semiconductor device noise; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Conference, 1988. Proceedings. New Frontiers in Testing, International

Conference_Location

Washington, DC

ISSN

1089-3539

Print_ISBN

0-8186-0870-6

Type

conf

DOI

10.1109/TEST.1988.207823

Filename

207823