DocumentCode :
3111409
Title :
Monolithically-integrated 8:1 SOA gate switch with small gain deviation and large input power dynamic range for WDM signals
Author :
Tanaka, Shinsuke ; Jeong, Seok-Hwan ; Uetake, Ayahito ; Yamazaki, Susumu ; Morito, Ken
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
fYear :
2010
fDate :
May 31 2010-June 4 2010
Firstpage :
1
Lastpage :
4
Abstract :
We developed a highly uniform monolithically integrated 8-input and 1-output (8:1) SOA gate switch for a large-scale high-speed switching system. The gain fluctuation due to an internal interference was suppressed with a low loss 8:1 tapered MMI coupler. The device exhibited a very small gain deviation of <;2.0 dB for all wavelengths in the C-band, together with a high extinction ratio of >50 dB and an ON-state gain of >10 dB. We also demonstrated a penalty-free amplification of 8×10 Gb/s WDM signals with a large input power dynamic range of >9.8 dB.
Keywords :
optical switches; semiconductor optical amplifiers; semiconductor switches; MMI coupler; WDM signals; large input power dynamic range; large-scale high-speed switching system; monolithically-integrated SOA gate switch; small gain deviation; Dynamic range; Extinction ratio; Fluctuations; Gain; Interference suppression; Large scale integration; Semiconductor optical amplifiers; Switches; Switching systems; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
ISSN :
1092-8669
Print_ISBN :
978-1-4244-5919-3
Type :
conf
DOI :
10.1109/ICIPRM.2010.5515990
Filename :
5515990
Link To Document :
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