Title :
Monte Carlo model of GaAs nanowhisker growth
Author :
Knyazeva, Maria V. ; Nastovjak, Alla G. ; Shwartz, Nataliya L.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
GaAs nanowhisker growth according to vapor-liquid-solid mechanism was realized on the basis of the lattice Monte Carlo model. Different solubility of Ga and As atoms in Au drop was taken into account in the model. Nanowhisker growth on GaAs(111)B surface activated by golden drops was demonstrated.
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; gold; nanofabrication; nanostructured materials; semiconductor growth; solid-liquid transformations; solid-vapour transformations; solubility; whiskers (crystal); Au; GaAs; GaAs(111)B surface; golden drops; lattice Monte Carlo model; nanowhisker growth; solubility; vapor-liquid-solid mechanism; Atomic layer deposition; Gallium; Gallium arsenide; Gold; Monte Carlo methods; Nanowires; Surface treatment; GaAs; Monte Carlo; nanowhisker;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006908
