Title :
Use of self-aligned technology in GaAs scotty diode fabrication
Author :
Yunusov, Igor V. ; Gavrilova, Anastasiya M. ; Arykov, Vadim S.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
The self-aligned technology of vertical diode fabrication is considered. The essential feature of the used technology is applying of the self-alignment principle in etching of base mesa and formation of ohmic contact. The experimental results show that the self-aligned technology allows to reduce series resistance and reverse leakage current and also to improve the ideality factor in comparison with similar diodes produced with use of standard technology.
Keywords :
III-V semiconductors; Schottky diodes; etching; gallium arsenide; leakage currents; ohmic contacts; GaAs; base mesa etching; ohmic contact; reverse leakage current; self-aligned technology; series resistance reduction; vertical Scotty diode fabrication; Control systems; Fabrication; Gallium arsenide; Metals; Resistance; Schottky diodes; Diode; electrical parameters; self-aligned;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006925
