DocumentCode :
3112142
Title :
Concurrent Enhancement of Q and Power Handling in Multi-Tether High-Order Extensional Resonators
Author :
Shahmohammadi, M. ; Harrington, Brandon P. ; Abdolvand, Reza
Author_Institution :
Oklahoma State University, Tulsa, United States
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
In this paper we demonstrate that quality factor (Q) and power handling, two inherently divergent characteristics of a resonator, can be improved simultaneously by designing high-order harmonic resonant structures anchored with multiple tethers. We show that in thin-film piezoelectric-on-substrate (TPoS) resonators, the quality factor is significantly altered by varying the resonator´s thickness, but the resonator´s power handling is often traded off for the higher Q. Q´s measured from TPoS resonators fabricated on a 30µm thick silicon substrate are up to 3 times higher than the values measured for devices on 20µm thick substrate while maximum deliverable power (at the bifurcation point) to the same device is reduced from 2.5dBm to −0.3dBm. In contrast, it is observed that the maximum deliverable power in a multi-tether ∼1GHz resonator is enhanced by more than 5dBm compared to an identical single-pair tethered resonator (7dBm versus 1.9dBm) and the Q is also increased by 55%.
Keywords :
Piezoelectric films; Power measurement; Power system harmonics; Q factor; Q measurement; Resonance; Semiconductor thin films; Substrates; Thickness measurement; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5516022
Filename :
5516022
Link To Document :
بازگشت