Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides

For characterization of oxide damage created by through the gate implantation (TGI) of boron, we prepared samples that allowed us to investigate reliability degradation and intrinsic electron trap density. Constant current stress measurements show a strong dependence of gate oxide reliability on TGI dose for oxide thickness down to 4.0 nm. An additional thermal treatment can anneal TGI induced damage to some extent. Based on our experimental results, we discuss possible extensions to common oxide breakdown models assuming an additional intrinsic electron trap density or an enhancement of electron trap generation rate, respectively.