Title :
The Hitachi advanced implanter UI-6000 for SIMOX wafer production
Author :
Tokiguchi, K. ; Seki, T. ; Itou, J. ; Kitazawa, S. ; Sato, T. ; Mera, K. ; Hashimoto, I. ; Yoshikawa, A.
Author_Institution :
Lab. of Power & Ind. Syst. R&D, Hitachi Ltd., Ibaraki, Japan
Abstract :
To produce high quality SIMOX wafers of 200 mm or 300 mm in diameter with high throughput, an oxygen ion implanter, UI-6000, was newly designed and constructed. The implanter operated stably at the wafer temperatures of 500 to 650 °C and gave 100 mA-class O+ current in the energy regions required for the low-dose SIMOX wafer fabrication process. The implant test showed that the clean and uniform implantation needed for next generation SIMOX-SOI device fabrication can be successfully realized with the UI-6000
Keywords :
SIMOX; ion implantation; semiconductor device manufacture; wafer-scale integration; 100 mA; 200 mm; 300 mm; 650 to 500 degC; Hitachi; O+ current; SIMOX wafer production; SIMOX-SOI device fabrication; Si:O; UI-6000; advanced O ion implanter; implant test; ion implantation technology; low-dose fabrication process; uniform implantation; wafer temperature; Data mining; Electrodes; Fabrication; Implants; Ion beams; Ion sources; Manufacturing industries; Optical beams; Production; Research and development;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924165
