Bandgap engineered InP-based power double heterojunction bipolar transistors

Author

Nguyen, Chanh ; Liu, Takyiu ; Chen, Mei ; Virk, Robinder ; Chen, Mei

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

15

Lastpage

19

Abstract

The bandgap engineering of InP-based DHBTs for power applications is demonstrated using chirped superlattices grown by GSMBE. The transport properties of electrons depend on the design parameters of the CSL and strongly affect the performance of the device. Excellent performance has been achieved. In the present paper, we describe device structure optimization, fabrication process and power performance of InP-based DHBTs at S, X, and K bands

Keywords

III-V semiconductors; chemical beam epitaxial growth; energy gap; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor superlattices; GSMBE growth; InP; InP DHBT; K-band; S-band; X-band; bandgap engineering; chirped superlattice; device design optimization; electron transport; fabrication; power double heterojunction bipolar transistor; Doping; Double heterojunction bipolar transistors; Electrons; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Microwave devices; Photonic band gap; Power engineering and energy; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600017

Filename

600017