Title :
Bandgap engineered InP-based power double heterojunction bipolar transistors
Author :
Nguyen, Chanh ; Liu, Takyiu ; Chen, Mei ; Virk, Robinder ; Chen, Mei
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
The bandgap engineering of InP-based DHBTs for power applications is demonstrated using chirped superlattices grown by GSMBE. The transport properties of electrons depend on the design parameters of the CSL and strongly affect the performance of the device. Excellent performance has been achieved. In the present paper, we describe device structure optimization, fabrication process and power performance of InP-based DHBTs at S, X, and K bands
Keywords :
III-V semiconductors; chemical beam epitaxial growth; energy gap; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor superlattices; GSMBE growth; InP; InP DHBT; K-band; S-band; X-band; bandgap engineering; chirped superlattice; device design optimization; electron transport; fabrication; power double heterojunction bipolar transistor; Doping; Double heterojunction bipolar transistors; Electrons; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Microwave devices; Photonic band gap; Power engineering and energy; Power generation;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600017
