Title :
Bulk ternary indium phosphide arsenide, InP1-xAsx : growth and characterization
Author_Institution :
Crystallod Inc., Somerville, NJ, USA
Abstract :
In(P,As) bulk ternary single crystal growth has been demonstrated using the liquid encapsulated Czochralski (LEC) technique with both InP and ternary In(P,As) seeds. Arsenic concentrations to nominally 10% have been achieved. While problems related to cracking and compositional uniformity exist, the single crystals are capable of producing wafers and bulk material for characterization and preliminary device studies. Optical and electrical measurements are reported
Keywords :
Hall mobility; III-V semiconductors; carrier density; crystal growth from melt; indium compounds; photoluminescence; semiconductor growth; twinning; As concentrations; Hall effect; InP1-xAsx; InPAs; LEC growth; bulk ternary single crystal growth; carrier concentration; carrier mobility; compositional uniformity; cracking; liquid encapsulated Czochralski technique; photoluminescence; twin structure; wafers; Crystalline materials; Crystals; Gallium arsenide; Gallium compounds; III-V semiconductor materials; Indium phosphide; Lattices; Optical materials; Substrates; Uncertainty;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600094
