InP-InAlAs and InGaP-InAlAs mixed spacers to reduce the gate leakage current in InAlAs/InGaAs/InP HEMTs

Author

Letartre, X. ; Rojo-Romeo, P. ; Tardy, J. ; Gendry, M. ; Thompson, D. ; Simmons, J.G.

Author_Institution

Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France

fYear

1997

fDate

11-15 May 1997

Firstpage

384

Lastpage

387

Abstract

In this work, we propose a comparative study of the behaviour of three HEMT structures at high reverse bias: a reference structure (S1) with a conventional InAlAs spacer, the second with an InP/InAlAs mixed spacer (S2) and the third with an In_0.5Ga_0.5P/InAlAs (S3) mixed spacer. We show a drastic decrease of the gate leakage current for the mixed spacer HEMTs, thanks to the large valence band offset between InP (or InGaP) and InGaAs. Moreover, Low Frequency Noise (LFN) measurements were performed to investigate the defect distribution in the three structures. These help us to distinguish between the transport mechanisms which govern the gate leakage current

Keywords

Hall effect; III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; leakage currents; semiconductor device noise; Hall measurements; In_0.5Ga_0.5P-InAlAs; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMTs; InP; InP-InAlAs; breakdown voltage; defect distribution; gate leakage current; high reverse bias; impact ionization; low frequency noise measurements; mixed spacers; transport mechanisms; valence band offset; Etching; HEMTs; Helium; Indium compounds; Indium gallium arsenide; Indium phosphide; Leakage current; MODFETs; Molecular beam epitaxial growth; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600166

Filename

600166