All solid source molecular beam epitaxy using valved cracking cells

Author

Baillargeon, J.N. ; Cho, A.Y. ; Hwang, W.Y. ; Chu, S.N.G.

Author_Institution

Lucent Technologies, AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

544

Lastpage

547

Abstract

Uniform growth of Ga_xIn_1-xAs_yP _1-y lattice matched to InP is demonstrated with molecular beam epitaxy using all solid sources. Elemental indium and gallium, and arsenic and red phosphorus in conjunction with valved cracking cells are utilized as column III and V sources. Photoluminescence emission measurements show better than 1% reproducibility and a best case wavelength uniformity of 6.5 nm for the quaternary. Fabry-Perot cavity, multi-quantum well, 1.3 μm emission lasers having excellent light-current characteristics were fabricated. The best devices show a transparency current density as low as 55 A/cm² per well and slope efficiency greater than 0.5 W/A

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; 1.3 micron; Fabry-Perot cavity; GaInAsP-InP; InP substrate; all solid source molecular beam epitaxy; growth; lattice matched GaInAsP layer; light-current characteristics; multi-quantum well laser; photoluminescence; quaternary material; reproducibility; slope efficiency; transparency current density; valved cracking cell; wavelength uniformity; Current density; Fabry-Perot; Gallium compounds; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photoluminescence; Reproducibility of results; Solids; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600224

Filename

600224