Title :
Low threshold current BH lasers fabricated by UHV chemical beam etching and GSMBE regrowth
Author :
Gentner, J-L ; Jarry, Ph ; Tscherptner, N. ; Goldstein, L.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
A new chlorine-based chemical beam etching technique (CBET) compatible with MBE or CBE technology has been introduced recently. The process sequence combining these two techniques in the same MBE growth chamber is very attractive for the realisation of high performance discrete or integrated optoelectronic devices. In this paper, we present for the first time results on devices fabricated using this new processing technique. Fabry-Perot type 1.3 and 1.48 μm Buried Heterostructure lasers with low threshold current values have been obtained. Well defined mesa profiles and excellent regrowth morphologies have been obtained. The effect of interface contamination has been pointed out, in particular for the case of silicon for which a direct effect on laser results has been shown
Keywords :
III-V semiconductors; chemical beam epitaxial growth; etching; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; semiconductor growth; surface contamination; 1.3 mum; 1.48 mum; 10 mA; Cl-based chemical beam etching technique; Fabry-Perot type buried heterostructure lasers; GSMBE regrowth; InGaAsP-InP; InGaAsP-InP BH laser fabrication; InP:Si; PCl3; UHV chemical beam etching; compressively strained quantum wells; interface contamination; low threshold current; mesa profiles; regrowth morphologies; Chemical lasers; Chemical technology; Contamination; Etching; Fabry-Perot; Integrated optoelectronics; Laser beams; Molecular beam epitaxial growth; Morphology; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600244
