Title :
A low energy plasma flood gun using RF plasma formation
Author :
Sakai, Shigeh ; Hamamoto, Nariaki ; Ikejiri, Tadashi ; Tanjyo, Masayasu
Author_Institution :
Dept. of Eng. & Productio, Nisson Ion Equipment Co. Ltd., Kyoto, Japan
Abstract :
A plasma flood gun (PFG) system useful for 300 mm wafer has been developed by using an RF plasma for the medium current implanter EXCEED2300. To produce low energy electrons, the electron energy is filtered by magnetic fields. To eliminate dose shift, a low flow rate of Xe gas is adopted. A linear geometry of the plasma production source chamber improves the spatial uniformity of the plasma flooding across the 300 mm wafer. The metal contamination and the maintenance time are also greatly improved with the RF plasma formation
Keywords :
ion implantation; plasma materials processing; semiconductor doping; 300 mm; RF plasma formation; dose shift; electron energy; ion implantation; linear geometry; low energy electrons; low energy plasma flood gun; magnetic fields; maintenance time; medium current implanter EXCEED2300; metal contamination; plasma production source chamber; Electrodes; Electrons; Floods; Plasma density; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Plasma sources; Production; Radio frequency;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924222
