Transient effects in SIMS depth profile analysis of 1 keV as implanted Si

Extracting information from SIMS depth profiles over the first few nanometers is a daunting task due to the introduction of severe SIMS transient effects. Transient effects result in unpredictable secondary ion yield variations. The nature of these transient effects noted in As implanted Si wafers analysed with 750 eV Cs⁺ primary ions are examined. This is carried out by ascertaining the chemical nature of the sputtered surface at various depths over the transient region using XPS, and performing analysis under various different ambient environments. The results reveal insight into the cause of the various transient effects, how secondary ion profiles are altered, and which secondary ion is least likely to be effected