Energy contamination control system in deceleration beam line

Author

Muroaka, H. ; Tsukihara, Mitsukuni ; Kabasawa, Mitsuaki ; Sugitani, Michiro ; Hidaka, Yoshitomo

Author_Institution

Sumitomo Eaton Nova Corp., Tokyo, Japan

fYear

2000

fDate

2000

Firstpage

699

Lastpage

702

Abstract

Energy contamination should be controlled in deceleration implants below 5 keV to make shallow junctions. Surface SIMS profiles of B⁺ 0.2 keV and 0.5 keV were obtained under various experimental conditions to evaluate the quantity of energy contamination. It is consequently found that the quantity of energy contamination correlates strongly with efficiency of beam transmission from the flag faraday to the disk faraday, and from ion source to the flag faraday. Based on this result, an energy contamination control system is developed for the NV-GSDIII-LE and 90E. Energy purity in an operation of the decel mode can be kept higher than 99% on these machines. The effectiveness of the transmission-control system is shown in this paper, showing the experimental results

Keywords

beam handling techniques; ion implantation; process control; secondary ion mass spectra; semiconductor doping; semiconductor junctions; 90E; NV-GSDIII-LE; Si:B; beam transmission; decel mode; deceleration beam line; deceleration implants; disk faraday; energy contamination control system; energy purity; flag faraday; ion source; shallow junctions; surface SIMS profiles; transmission-control system; Atomic beams; Boron; Control systems; Force control; Implants; Ion sources; Lenses; Manufacturing; Space charge; Surface contamination;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924249

Filename

924249