Title :
Study of indium cross contamination in quarter micron device implants
Author :
Cheng, S.J. ; Chen, W.W. ; Yang, Y.C. ; Hwang, AndY L.
Author_Institution :
Varian Semicond. Equip. Associates Pacific Inc., Taiwan
Abstract :
As the device technology node shrinks to sub 0.18 μm, a heavier dopant such as indium (In) is required for Super-Steep-Retrograde channel (SSR) and Halo (Pocket) implant application. Because of the difficulty in removing residual In, cross contamination of indium in the ion implanter is the main concern for a mass production machine. This paper reviews the impact of the cross contamination on the different implant layers in 0.25 μm device process flow
Keywords :
doping profiles; elemental semiconductors; indium; ion implantation; silicon; surface contamination; 0.18 mum; 0.25 μm device process flow; 0.25 mum; Halo Pocket implant application; Si:In; Super-Steep-Retrograde channel; device technology node; heavier dopant; indium cross contamination; ion implanter; mass production machine; quarter micron device implants; residual In; review; Atomic layer deposition; Clamps; Conductivity; Contamination; Implants; Indium; Ion beams; Maintenance engineering; Mass production; Monitoring;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924254
