Title :
Improvement in noise figure of wide-gate-head InP-based HEMTs with cavity structure
Author :
Takahashi, T. ; Sato, M. ; Nakasha, Y. ; Hirose, T. ; Hara, N.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
Dependences of minimum noise figure at 94 GHz on gate-head length were studied using InP-based HEMTs. The noise figure was improved effectively by using a cavity structure even though a wide gate-head was employed. Wide gate-head InP-based HEMTs with a cavity structure are promising candidates for improving low-noise properties at millimeter-wave frequencies.
Keywords :
high electron mobility transistors; indium compounds; InP; cavity structure; frequency 94 GHz; low-noise properties; millimeter-wave frequencies; noise figure; wide-gate-head based HEMT; Charge carrier density; Fabrication; HEMTs; Head; Indium phosphide; MODFETs; Millimeter wave transistors; Noise figure; Parasitic capacitance; Substrates;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516196
