Research on Flashover Characteristics and the Physical Mechanism of High-Gain GaAs Photoconductive Switches

Author

Ma, Cheng ; Shi, Wei ; Li, Mengxia ; Gui, Huaimeng ; Wang, Luyi ; Jiang, Huan ; Fu, Zhanglong ; Cao, Juncheng

Author_Institution

Dept. of Appl. Phys., Xi´an Univ. of Technol., Xi´an, China

Volume

50

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

568

Lastpage

574

Abstract

We have presented surface flashover characteristics of high-gain GaAs photoconductive semiconductor switch (PCSS) under the different output current. Under the low output current, the recorded flashover spectrum was different from the spark discharge spectrum of air. Based on the analysis of current waveform and the flashover spectrum, the physical mechanism of the flashover phenomena was discussed. Under the high output current, the recorded time waveform of flashover was periodic oscillation. This phenomenon was analyzed based on pinch effect. Finally, the mechanism of the surface flashover led to the damage of GaAs PCSS, which was demonstrated and analyzed.

Keywords

III-V semiconductors; flashover; gallium arsenide; oscillations; photoconductivity; pinch effect; semiconductor switches; GaAs; high-gain photoconductive semiconductor switch; periodic oscillation; pinch effect; recorded flashover spectrum; spark discharge spectrum; surface flashover characteristics; Electric fields; Electrodes; Flashover; Gallium arsenide; Optical fibers; Plasmas; Surface waves; Photoconductive semiconductor switch (PCSS); current filament; damage; flashover spectrum; surface flashover;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2014.2327191

Filename

6824219