Role of FET size in the optimization of MMIC nonlinear performance

Author

Crespo-Cadenas, Carlos ; Reina-Tosina, Javier

Author_Institution

Dept. Ingenieria Electronica, Seville Univ., Spain

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

125

Lastpage

129

Abstract

One of the main advantages of MMIC technology is the possibility of making a full use of scaling properties to improve performance. The majority of approaches which apply device-scaling only attend to linear criteria, without considering the improvement that could be achieved in nonlinear performance, like intermodulation distortion. In this paper, nonlinear design criteria are proposed to help in the selection of HEMT gate-width in MMICs, which are applied to several circuits, including a differential amplifier, a doubly balanced mixer and a single FET resistive mixer.

Keywords

HEMT integrated circuits; MMIC amplifiers; MMIC mixers; circuit optimisation; differential amplifiers; field effect MMIC; integrated circuit design; integrated circuit modelling; intermodulation distortion; FET size; HEMT gate-width; MMIC nonlinear performance optimization; MMIC performance improvement; MMIC technology device-scaling properties; differential amplifiers; doubly balanced mixers; intermodulation distortion; single FET resistive mixers; Design optimization; Differential amplifiers; HEMTs; Integrated circuit modeling; MMICs; Microwave FETs; Noise figure; Power amplifiers; Predictive models; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174942

Filename

1174942