Title :
Short q-ary WOM codes with hot/cold write differentiation
Author :
Cassuto, Yuval ; Yaakobi, Eitan
Author_Institution :
Electr. Eng. Dept., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
We construct new WOM codes with practical design considerations. First the problem of 2 cell q-ary WOM codes is addressed with a construction that uses lattice tilings. The resulting codes for arbitrary numbers of input bits are shown to be within a small additive constant from the capacity. Then we introduce a new model of WOM codes that support data bits with different update requirements. Differentiation between frequently written (hot) bits and rarely written (cold) ones allows a large number of re-writes while leveling the wear between the hot and cold input bits.
Keywords :
codes; storage management chips; cell q-ary WOM codes; data bits; hot-cold write differentiation; lattice tilings; short Q-ary WOM codes; write-once memories; Ash; Decoding; Encoding; Lattices; Shape; Tiles; Vectors;
Conference_Titel :
Information Theory Proceedings (ISIT), 2012 IEEE International Symposium on
Conference_Location :
Cambridge, MA
Print_ISBN :
978-1-4673-2580-6
Electronic_ISBN :
2157-8095
DOI :
10.1109/ISIT.2012.6283489