Switching kinetics in normal and relaxor ferroelectrics: PZT thin films and PLZT ceramics

Author

Shur, Vladimir

Author_Institution

Ural State Univ., Ekaterinburg, Russia

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

233

Abstract

The switching process in normal and relaxor ferroelectrics was described as a result of evolution of domain structure. The original mathematical treatment allows to extract the main kinetic parameters from switching current and elastic light scattering data measured under the action of field pulses. Specific of domain kinetics in ferroelectric thin films and relaxor ceramics was demonstrated. The scenario of evolution of heterophase structure in relaxers during “switching” and spontaneous “backswitching” is proposed

Keywords

ceramics; electric domains; ferroelectric switching; ferroelectric thin films; lanthanum compounds; lead compounds; light scattering; piezoceramics; PLZT; PZT; PbLaZrO3TiO3; PbZrO3TiO3; domain structure; elastic light scattering; ferroelectric thin film; heterophase structure; relaxor ceramic; spontaneous backswitching; switching kinetics; Ceramics; Electrodes; Ferroelectric materials; Kinetic theory; Polarization; Pulse measurements; Relaxor ferroelectrics; Tail; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602741

Filename

602741