Title :
Growth behavior of LaNiO3 and their effect on the pulsed laser deposited PLZT films
Author :
Tseng, Tzu-Feng ; Yang, Rong-Pyng ; Liu, Kuo-Shung ; Lin, I-Nan
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
(Pb0.97La0.03)(Zr0.66Ti0.34 )0.9875O3, PLZT, thin films were successfully deposited on either LaNiO3 (LNO) or LNO/Pt coated Si3N4/Si substrates by pulsed laser deposition process. Using LNO/Pt as double layer electrodes resulted in PLZT films with superior electric properties, that is attributed to the low surface resistivity of electrode materials (i.e., ρLNOPt/=0 5 mΩ·cm). The ferroelectric properties of Pr=21.6 μC/cm2, Ec=89 kV/cm and the dielectric constant of K=1,028 were obtained for (PLZT) LNOPt/ thin films
Keywords :
ferroelectric thin films; lanthanum compounds; lead compounds; permittivity; piezoceramics; pulsed laser deposition; LNO coating; LNO/Pt double layer electrode; LaNiO3-Pt; PLZT; PLZT film; PbLaZrO3TiO3; Si3N4-Si; Si3N4/Si substrate; dielectric constant; electric properties; ferroelectric properties; growth; pulsed laser deposition; surface resistivity; Conductivity; Dielectric materials; Electrodes; Ferroelectric films; Ferroelectric materials; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Sputtering; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602763
