DocumentCode
311765
Title
Piezoelectric characterization of Pb(Zr,Ti)O3 thin films by interferometric technique
Author
Kholkin, A.L. ; Tagantsev, A.K. ; Brooks, K.G. ; Taylor, D.V. ; Setter, N.
Author_Institution
Ceramic Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Volume
1
fYear
1996
fDate
18-21 Aug 1996
Firstpage
351
Abstract
In this paper different aspects of piezoelectric characterization of ferroelectric thin films are discussed. An experimental technique based on a double-beam laser interferometer is described which allows the study of small electric field induced displacements in thin films. The interferometric technique is successfully applied for the evaluation of the piezoelectric properties of ferroelectric thin films. Examples of piezoelectric behavior are given for sol-gel Pb(Zr,Ti)O3 films of compositions and thicknesses. Are linked to the poling conditions and to the orientation of the grains. The of domain wall motion to the piezoelectric response in oriented PZT films is discussed
Keywords
ferroelectric thin films; lead compounds; light interferometry; piezoceramics; piezoelectric thin films; PZT; PbZrO3TiO3; domain wall motion; double-beam laser interferometry; electric field induced displacement; ferroelectric thin film; grain orientation; piezoelectric properties; poling; sol-gel film; Displacement measurement; Ferroelectric films; Ferroelectric materials; Micromechanical devices; Optical films; Optical interferometry; Optical sensors; Piezoelectric effect; Piezoelectric films; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location
East Brunswick, NJ
Print_ISBN
0-7803-3355-1
Type
conf
DOI
10.1109/ISAF.1996.602765
Filename
602765
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