Title :
Study on polarization switching as a function of composition in PZT thin films
Author_Institution :
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Polarization switching has been studied as a function of composition and processing conditions. In tetragonal region, remnant polarization and coercive field increased for higher annealing temperatures. A definite threshold field value where PR and E C saturated was observed This is presumed to be due to internal fields created by space charge layers. When studied as a function of composition dependence of PR and EC showed saturation in MPB region. Lowest threshold field value was observed for films with Zr=0.50. A maximum of PR=35 μc/cm 2 for Zr=0.50 and a minimum of EC=43 kV/cm for Zr=0.55 was obtained
Keywords :
annealing; dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric storage; ferroelectric switching; ferroelectric thin films; lead compounds; piezoceramics; sol-gel processing; space-charge-limited conduction; MPB region; PZT; PbZrO3TiO3; annealing temperatures; coercive field; composition dependence; ferroelectric capacitors; internal fields; polarization switching; processing conditions; remnant polarization; space charge layers; tetragonal region; threshold field value; Capacitors; Electrodes; Ferroelectric materials; Hysteresis; Polarization; Rapid thermal annealing; Temperature dependence; Transistors; Voltage; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602780
